JANTX2N6059 Overview
In this device, the DC current gain is 1000 @ 6A 3V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 3V allows maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 120mA, 12A.An emitter's base voltage can be kept at 5V to gain high efficiency.
JANTX2N6059 Features
the DC current gain for this device is 1000 @ 6A 3V
a collector emitter saturation voltage of 3V
the vce saturation(Max) is 3V @ 120mA, 12A
the emitter base voltage is kept at 5V
JANTX2N6059 Applications
There are a lot of Microsemi Corporation JANTX2N6059 applications of single BJT transistors.
- Interface
- Driver
- Muting
- Inverter
