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2N5349

2N5349

2N5349

Microsemi Corporation

Bipolar Transistors - BJT Power BJT

SOT-23

2N5349 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Mount Stud
Number of Pins 3
Transistor Element Material SILICON
PackagingBulk
Published 2007
JESD-609 Code e0
Pbfree Code no
Part StatusActive
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN LEAD
HTS Code8541.29.00.95
Max Power Dissipation60W
Terminal Position UPPER
Terminal FormUNSPECIFIED
Number of Elements 1
Configuration SINGLE
Case Connection ISOLATED
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 7A
JEDEC-95 Code TO-59
DC Current Gain-Min (hFE) 60
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:91 items

Pricing & Ordering

QuantityUnit PriceExt. Price
100$132.10400$13210.4

About 2N5349

The 2N5349 from Microsemi Corporation is a high-performance microcontroller designed for a wide range of embedded applications. This component features Bipolar Transistors - BJT Power BJT.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the 2N5349, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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