TIP31AG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
TIP31AG Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Number of Pins
3
Weight
45.359237kg
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
60V
Max Power Dissipation
40W
Peak Reflow Temperature (Cel)
260
Current Rating
3A
Frequency
3MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
TIP31
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
2W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
3MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 3A 4V
Current - Collector Cutoff (Max)
300μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1.2V @ 375mA, 3A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
3MHz
Collector Emitter Saturation Voltage
1.2V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
hFE Min
25
Height
15.748mm
Length
10.28mm
Width
4.82mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:7884 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.62000
$0.62
50
$0.49900
$24.95
100
$0.40150
$40.15
500
$0.31800
$159
TIP31AG Product Details
TIP31AG Description
The TIP31AG is a medium-power NPN bipolar junction transistor that is commonly used. TIP31AG transistor is a three-terminal bipolar junction transistor (BJT) that can be used for amplification or switching. TIP31AG is made up of three parts of semiconductors, each with a different doping pattern. The base is thin, and the emitter and collector are extensively doped on the exterior.
TIP31AG Features
High current gain - bandwidth 60VDC Minimum collector-emitter sustaining voltage (VCEO (sus)) 1.2VDC Maximum collector-emitter saturation voltage (VCE (sat)) 60VDC Collector to base voltage (VCBO) 5VDC Emitter to base voltage (VEBO) 5ADC Peak collector current 1ADC Base current (IB) 3.125°C/W Thermal resistance, junction to case 62.5°C/W Thermal resistance, junction to ambient
TIP31AG Applications
Industrial Speed control of Motors Half-bridge circuits high current switching (up to 2A) loads Can be used as medium Power switches Large signal amplification Inverter and other rectifier circuits
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