2N4400TFR Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 50 @ 150mA 1V.The collector emitter saturation voltage is 750mV, which allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The emitter base voltage can be kept at 6V for high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 600mA current rating.In extreme cases, the collector current can be as low as 600mA volts.
2N4400TFR Features
the DC current gain for this device is 50 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
2N4400TFR Applications
There are a lot of ON Semiconductor 2N4400TFR applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
