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MJH11017G

MJH11017G

MJH11017G

ON Semiconductor

MJH11017G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJH11017G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mounting Type Through Hole
Package / Case TO-247-3
Surface MountNO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -150V
Max Power Dissipation150W
Peak Reflow Temperature (Cel) 260
Current Rating-15A
[email protected] Reflow Temperature-Max (s) 40
Pin Count3
Number of Elements 1
Polarity PNP
Element ConfigurationSingle
Power Dissipation150W
Case Connection COLLECTOR
Transistor Application SWITCHING
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 150V
Max Collector Current 15A
DC Current Gain (hFE) (Min) @ Ic, Vce 400 @ 10A 5V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 4V @ 150mA, 15A
Collector Emitter Breakdown Voltage150V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage2.5V
Frequency - Transition 3MHz
Collector Base Voltage (VCBO) 150V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 15A
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2046 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$12.019360$12.01936
10$11.339019$113.39019
100$10.697188$1069.7188
500$10.091686$5045.843
1000$9.520459$9520.459

MJH11017G Product Details

MJH11017G Overview


This device has a DC current gain of 400 @ 10A 5V, which is the ratio between the collector current and the base current.With a collector emitter saturation voltage of 2.5V, it offers maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 4V @ 150mA, 15A.Single BJT transistor is recommended to keep the continuous collector voltage at 15A in order to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of -15A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.There is a transition frequency of 3MHz in the part.Maximum collector currents can be below 15A volts.

MJH11017G Features


the DC current gain for this device is 400 @ 10A 5V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 4V @ 150mA, 15A
the emitter base voltage is kept at 5V
the current rating of this device is -15A
a transition frequency of 3MHz

MJH11017G Applications


There are a lot of ON Semiconductor MJH11017G applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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