PBSS5350D,135 Overview
In this device, the DC current gain is 100 @ 2A 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 300mV @ 200mA, 2A means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 6V can result in a high level of efficiency.As you can see, the part has a transition frequency of 100MHz.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 3A volts.
PBSS5350D,135 Features
the DC current gain for this device is 100 @ 2A 2V
the vce saturation(Max) is 300mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PBSS5350D,135 Applications
There are a lot of Nexperia USA Inc. PBSS5350D,135 applications of single BJT transistors.
- Muting
- Interface
- Driver
- Inverter
