MJE170 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 50 @ 100mA 1V DC current gain.This design offers maximum flexibility with a collector emitter saturation voltage of 1.7V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.7V @ 600mA, 3A.An emitter's base voltage can be kept at 7V to gain high efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.In this part, there is a transition frequency of 50MHz.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
MJE170 Features
the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 1.7V
the vce saturation(Max) is 1.7V @ 600mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is -3A
a transition frequency of 50MHz
MJE170 Applications
There are a lot of ON Semiconductor MJE170 applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
