CP336V-2N5551-CT Overview
This device has a DC current gain of 80 @ 10mA 5V, which is the ratio between the base current and the collector current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 200mV @ 5mA, 50mA.Die is the supplier device package for this product.There is a 160V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible to have a collector current as low as 600mA volts at Single BJT transistors maximum.
CP336V-2N5551-CT Features
the DC current gain for this device is 80 @ 10mA 5V
the vce saturation(Max) is 200mV @ 5mA, 50mA
the supplier device package of Die
CP336V-2N5551-CT Applications
There are a lot of Central Semiconductor Corp CP336V-2N5551-CT applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
