MJ11022G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 400 @ 10A 5V.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.A VCE saturation (Max) of 3.4V @ 150mA, 15A means Ic has reached its maximum value(saturated).If the emitter base voltage is kept at 50V, a high level of efficiency can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (15A).Single BJT transistor contains a transSingle BJT transistorion frequency of 3MHz.A maximum collector current of 15A volts is possible.
MJ11022G Features
the DC current gain for this device is 400 @ 10A 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3.4V @ 150mA, 15A
the emitter base voltage is kept at 50V
the current rating of this device is 15A
a transition frequency of 3MHz
MJ11022G Applications
There are a lot of ON Semiconductor MJ11022G applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
