BSS63AHZGT116 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 25mA 1V.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 10mA, 100mA.A 100V maximal voltage - Collector Emitter Breakdown is present in the device.
BSS63AHZGT116 Features
the DC current gain for this device is 30 @ 25mA 1V
the vce saturation(Max) is 500mV @ 10mA, 100mA
BSS63AHZGT116 Applications
There are a lot of ROHM Semiconductor BSS63AHZGT116 applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
