PBSS5160T,215 Overview
In this device, the DC current gain is 150 @ 500mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 330mV @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.There is a transition frequency of 220MHz in the part.An input voltage of 60V volts is the breakdown voltage.During maximum operation, collector current can be as low as 1A volts.
PBSS5160T,215 Features
the DC current gain for this device is 150 @ 500mA 5V
the vce saturation(Max) is 330mV @ 100mA, 1A
the emitter base voltage is kept at -5V
a transition frequency of 220MHz
PBSS5160T,215 Applications
There are a lot of Nexperia USA Inc. PBSS5160T,215 applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
