MMBTA13-7-F Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10000 @ 100mA 5V.A collector emitter saturation voltage of 1.5V ensures maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1.5V @ 100μA, 100mA.Keeping the emitter base voltage at 10V allows for a high level of efficiency.This device has a current rating of 100mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.A breakdown input voltage of 30V volts can be used.When collector current reaches its maximum, it can reach 300mA volts.
MMBTA13-7-F Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 100mA
a transition frequency of 125MHz
MMBTA13-7-F Applications
There are a lot of Diodes Incorporated MMBTA13-7-F applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting