IRFP460C Description
The planar stripe, DMOS technology developed by Fairchild is used to create IRFP460C N-Channel enhancement mode power field effect transistors. In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver greater switching performance, and withstand high energy pulses. These devices are ideal for power factor corrections and high efficiency switch mode power supply.
IRFP460C Features
Fast switching
100% avalanche tested
Low Crss ( typical 60 pF)
Improved dv/dt capability
Low gate charge ( typical 130nC)
20A, 500V, RDS(on) = 0.24? @VGS = 10 V
IRFP460C Applications
Industrial
Personal electronics
Communications equipment
