FQP18N50V2 Description
The N-Channel enhancement mode power field-effect transistors were created utilizing the exclusive planar stripe DMOS process developed by Fairchild.
In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver greater switching performance, and withstand high energy pulses. These devices are excellent for active power factor correction, electronic light ballasts based on half bridge architecture, and high efficiency switching mode power supply.
FQP18N50V2 Features
550V @TJ = 150°C
Typ. RDS(on) = 0.265? @VGS = 10 V
Low gate charge (typical 42 nC)
Low Crss (typical 11 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
FQP18N50V2 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
Switching applications
