Name: FDV303N
Brand: ON Semiconductor
SKU: FDV303N
Price: 0.43000 USD
Availability: InStock

new-10%

FDV303N

Manufacturer part number:FDV303N

Manufacturer:ON Semiconductor

Description:FDV303N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDV303N Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Lifecycle Status	ACTIVE (Last Updated: 16 hours ago)
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	1997
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	SMD/SMT
ECCN Code	EAR99
Resistance	450mOhm
Terminal Finish	TIN
Subcategory	FET General Purpose Power
Voltage - Rated DC	25V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	680mA
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	1
Number of Channels	1
Voltage	20V
Power Dissipation-Max	350mW Ta
Element Configuration	Single
Current	12A
Operating Mode	ENHANCEMENT MODE
Power Dissipation	350mW
Turn On Delay Time	3 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	450m Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 10V
Current - Continuous Drain (Id) @ 25°C	680mA Ta
Gate Charge (Qg) (Max) @ Vgs	2.3nC @ 4.5V
Rise Time	8.5ns
Drive Voltage (Max Rds On,Min Rds On)	2.7V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	8.5 ns
Turn-Off Delay Time	17 ns
Continuous Drain Current (ID)	680mA
Threshold Voltage	800mV
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	25V
Dual Supply Voltage	25V
Max Junction Temperature (Tj)	150°C
Nominal Vgs	800 mV
Height	1.11mm
Length	2.92mm
Width	3.05mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

FDV303N Product Details

FDV303N Description

FDV303N N-Channel MOSFET is using a proprietary, high cell density. FDV303N datasheet can remove the additional components and improve system reliability in certain applications that require performance improvement of the body diode. FDV303N ON Semiconductor is used in high-efficiency miniature discrete DC/DC conversion in compact portable electronic devices like cellular phones and pagers.