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HUFA75639S3ST

HUFA75639S3ST

HUFA75639S3ST

ON Semiconductor

MOSFET 56a 100V N-Ch UltraFET 0.025 Ohm

SOT-23

HUFA75639S3ST Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 16 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.31247g
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2002
Series Automotive, AEC-Q101, UltraFET™
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
HTS Code8541.29.00.95
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Current Rating56A
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 200W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation200W
Case Connection DRAIN
Turn On Delay Time15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 25m Ω @ 56A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 56A Tc
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Rise Time60ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 25 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 56A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.025Ohm
Drain to Source Breakdown Voltage 100V
Height 4.83mm
Length 10.67mm
Width 9.65mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:6319 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.053996$1.053996
10$0.994336$9.94336
100$0.938053$93.8053
500$0.884956$442.478
1000$0.834863$834.863

About HUFA75639S3ST

The HUFA75639S3ST from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET 56a 100V N-Ch UltraFET 0.025 Ohm.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the HUFA75639S3ST, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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