HGTP7N60A4-F102 Description
The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4are MOS gated high voltage switching devices combiningthe best features of MOSFETs and bipolar transistors. Thesedevices have the high input impedance of a MOSFET andthe low on-state conduction loss of a bipolar transistor. Themuch lower on-state voltage drop varies only moderatelybetween 25oC and 150oC.This IGBT is ideal for many high voltage switchingapplications operating at high frequencies where lowconduction losses are essential. This device has beenoptimized for high frequency switch mode power supplies.
HGTP7N60A4-F102 Features
? >100kHz Operation at 390V, 7A
? 200kHz Operation at 390V, 5A
? 600V Switching SOA Capability
? Typical Fall Time . . . . . . . . . . . . . . . . . . . 75ns at TJ = 125oC
? Low Conduction Loss
HGTP7N60A4-F102 Applications
■ High frequency motor controls, inverters, ups
■ HF, SMPS and PFC in both hard switch
