SGL60N90DG3YDTU Description
Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very suitable for induction heating applications.
SGL60N90DG3YDTU Features
? High speed switching
? Low saturation voltage : VCE(sat) = 2.0 V @ IC = 60A
? High input impedance
? Built-in fast recovery diode
SGL60N90DG3YDTU Applications
Home appliances, induction heaters, induction heating JARs, and microwave ovens.
