IHW40N135R3FKSA1 Description
The IHW40N135R3FKSA1 is a Reverse conducting IGBT with a monolithic body diode. An insulated-gate bipolar transistor is referred to as IGBT. It has an insulated gate terminal and is a bipolar transistor. The IGBT combines a control input with a MOS structure and a bipolar power transistor that serves as an output switch in a single piece of hardware. High-voltage, high-current applications are suited for IGBTs.
IHW40N135R3FKSA1 Features
Low EMI
Qualified according to JESD-022 for target applications
Pb-free lead plating; RoHS compliant
Halogen free (according to IEC 61249-2-21)
Offers new higher breakdown voltage to 1350V for improved reliability
Powerful monolithic body diode with low forward voltage
designed for soft commutation only
TRENCHSTOP? technology offering:
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- low VCEsat
- easy parallel switching capability due to positive temperature coefficient in VCEsat
IHW40N135R3FKSA1 Applications
Resonant converters
Soft switching applications
Inductive cooking
Inverterized microwave ovens
Switched Mode Power Supply
