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HGTP10N120BN

HGTP10N120BN

HGTP10N120BN

ON Semiconductor

HGTP10N120BN datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

HGTP10N120BN Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 44 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
JESD-609 Code e3
Pbfree Code yes
Part StatusNot For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional FeatureLOW CONDUCTION LOSS
HTS Code8541.29.00.95
Voltage - Rated DC 1.2kV
Max Power Dissipation49.2W
Current Rating35A
Number of Elements 1
Element ConfigurationSingle
Power Dissipation298W
Case Connection COLLECTOR
Input Type Standard
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 35A
Collector Emitter Breakdown Voltage1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage2.45V
Max Breakdown Voltage 300V
Turn On Time32 ns
Test Condition 960V, 10A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Continuous Collector Current 35A
Turn Off Time-Nom (toff) 330 ns
IGBT Type NPT
Gate Charge100nC
Current - Collector Pulsed (Icm) 80A
Td (on/off) @ 25°C 23ns/165ns
Switching Energy 320μJ (on), 800μJ (off)
Height 9.4mm
Length 10.67mm
Width 4.83mm
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:4046 items

Pricing & Ordering

QuantityUnit PriceExt. Price
800$1.87608$1500.864

HGTP10N120BN Product Details

HGTP10N120BN IGBT Description


The HGTP10N120BN is based on IGBT Non-Punch Through (NPT) designs. The IGBT is appropriate for a wide range of high voltage switching applications that operate at moderate frequencies and need minimal conduction losses, such as UPS, solar inverters, motor control, and power supply.



HGTP10N120BN IGBT Features


  • Low saturation voltage: VCE(sat) = 2.45V @ IC = 10A

  • Short Circuit Rating

  • 17A, 1200V, TC = 110°C

  • Low Conduction Loss

  • Typical Fall Time. . . . . . . . . .140ns at TJ= 150°C



HGTP10N120BN IGBT Applications


  • Motor Control

  • AirCon

  • UPS System

  • Washing Machine

  • Compressor

  • Fan

  • Home Appliance

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