AIGW40N65H5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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AIGW40N65H5XKSA1 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
39 Weeks
Mounting Type
Through Hole
Package / Case
TO-247-3
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2012
Series
Automotive, AEC-Q101, Trenchstop™ 5
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Input Type
Standard
Power - Max
250W
Voltage - Collector Emitter Breakdown (Max)
650V
Current - Collector (Ic) (Max)
74A
Test Condition
400V, 20A, 15 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 40A
IGBT Type
Trench
Gate Charge
95nC
Current - Collector Pulsed (Icm)
120A
Td (on/off) @ 25°C
19ns/165ns
Switching Energy
350μJ (on), 100μJ (off)
RoHS Status
ROHS3 Compliant
In-Stock:1097 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.82000
$6.82
10
$6.16100
$61.61
240
$5.12721
$1230.5304
720
$4.42947
$3189.2184
AIGW40N65H5XKSA1 Product Details
AIGW40N65H5XKSA1 Description
AIGW40N65H5XKSA1 is a single IGBT from the manufacturer Infineon Technologies with the break down voltage of 650V. The operating temperature of AIGW40N65H5XKSA1 is -40°C~175°C TJ and its Current - Collector (Ic) (Max) is 8.2A. AIGW40N65H5XKSA1 has 3 pins and it is available in Tube packaging way. The Voltage - Collector Emitter Breakdown (Max) of AIGW40N65H5XKSA1 is 650V.
AIGW40N65H5XKSA1 Features
Best-in-Class efficiency in hard switching and resonant topologies
Plug and play replacement of previous generation IGBTs
650V breakdown voltage
Low gate charge QG
Maximum junction temperature 175°C
Dynamically stress tested
Qualified according to AEC-Q101
Green package (RoHScompliant)
AIGW40N65H5XKSA1 Applications
Off-board charger
On-board charger
DC/DC converter
Power-Factor correction
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