NGTB60N65FL2WG Description
This Insulated Gate Bipolar Transistor (IGBT) features a robust andcost effective Field Stop (FS) Trench construction, and providessuperior performance in demanding switching applications, offeringboth low on state voltage and minimal switching loss.
NGTB60N65FL2WG Features
? Extremely Efficient Trench with Field Stop Technology
? TJmax = 175°C
? Soft Fast Reverse Recovery Diode
? Optimized for High Speed Switching
? 5 s Short?Circuit Capability
? These are Pb?Free Devices
NGTB60N65FL2WG Applications
? Solar Inverters
? Uninterruptible Power Supplies (UPS)
? Welding
