HGTG30N60A4 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
HGTG30N60A4 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-247-3
Number of Pins
3
Weight
6.39g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
LOW CONDUCTION LOSS
HTS Code
8541.29.00.95
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
463W
Current Rating
75A
Base Part Number
HGTG30N60
Number of Elements
1
Element Configuration
Single
Power Dissipation
463W
Case Connection
COLLECTOR
Input Type
Standard
Turn On Delay Time
25 ns
Transistor Application
POWER CONTROL
Rise Time
12ns
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
150 ns
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
75A
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.8V
Turn On Time
35 ns
Test Condition
390V, 30A, 3 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.6V @ 15V, 30A
Continuous Collector Current
75A
Turn Off Time-Nom (toff)
238 ns
Gate Charge
225nC
Current - Collector Pulsed (Icm)
240A
Td (on/off) @ 25°C
25ns/150ns
Switching Energy
280μJ (on), 240μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
7V
Fall Time-Max (tf)
70ns
Height
20.82mm
Length
15.87mm
Width
4.82mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:4204 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$7.11000
$7.11
10
$6.44200
$64.42
450
$5.14520
$2315.34
900
$4.71299
$4241.691
HGTG30N60A4 Product Details
HGTG30N60A4 Description
The HGTG30N60A4 is a MOS gated high voltage switching device that combines MOSFET and bipolar transistor capabilities. This device has a MOSFET's high input impedance and a bipolar transistor's low on-state conduction loss. Between 25oC and 150oC, the significantly smaller on-state voltage loss fluctuates relatively modestly. This IGBT is suited for a variety of high-voltage switching applications that operate at high frequencies and require minimal conduction losses. This gadget was created with high-frequency switch-mode power supplies in mind.
