IRG4RC10SDTRPBFBTMA1 Features
Extremely low voltage drop 1 .1V(typ) @ 2A
S-Series: Minimizes power dissipation atup to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.
Tight parameter distribution
IGBT co-packaged with HEXFRED TM utrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
Industry standard TO-252AA package
IRG4RC10SDTRPBFBTMA1 Applications
Generation 4 IGBT's offer highest eficiencies available
IGBT's optimized for specific application conditions
HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing
Lower losses than MOSFET's conduction and Diode losses
