HGT1S20N36G3VL datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website
SOT-23
HGT1S20N36G3VL Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins
3
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
360V
Max Power Dissipation
150W
Current Rating
20A
Element Configuration
Single
Power Dissipation
150W
Input Type
Logic
Collector Emitter Voltage (VCEO)
1.9V
Max Collector Current
37.7A
Collector Emitter Breakdown Voltage
395V
Collector Emitter Saturation Voltage
1.3V
Test Condition
300V, 10A, 25 Ω, 5V
Vce(on) (Max) @ Vge, Ic
1.9V @ 5V, 20A
Gate Charge
28.7nC
Td (on/off) @ 25°C
-/15μs
RoHS Status
RoHS Compliant
Lead Free
Lead Free
In-Stock:3523 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$9.914560
$9.91456
10
$9.353358
$93.53358
100
$8.823923
$882.3923
500
$8.324456
$4162.228
1000
$7.853260
$7853.26
HGT1S20N36G3VL Product Details
HGT1S20N36G3VL Description
This N-Channel IGBT is a MOS gated, logic-level device that is intended to be used as an ignition coil driver in automotive ignition circuits. Unique features include an active voltage clamp between the collector and the gate which provides Self Clamped InductiveSwitching (SCIS) capability in ignition circuits. Internal diodes provide ESD protection for the logic level gate. Both a series resistor and a shunt resistor are provided in the gate circuit.
HGT1S20N36G3VL Features
Logic Level Gate Drive
Internal Voltage Clamp
ESD Gate Protection
Tj= 175°C
Ignition Energy Capable
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