IRG4PC50KPBF

Name: IRG4PC50KPBF
Brand: Infineon Technologies
SKU: IRG4PC50KPBF
Price: 2.08000 USD
Availability: InStock

new-10%

Manufacturer part number:IRG4PC50KPBF

Manufacturer:Infineon Technologies

Description:IRG4PC50KPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRG4PC50KPBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	2000
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	200W
Peak Reflow Temperature (Cel)	250
Current Rating	52A
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	1
Element Configuration	Single
Power Dissipation	200W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	38 ns
Transistor Application	POWER CONTROL
Rise Time	34ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	160 ns
Collector Emitter Voltage (VCEO)	2.2V
Max Collector Current	52A
JEDEC-95 Code	TO-247AC
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.84V
Turn On Time	72 ns
Test Condition	480V, 30A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 30A
Turn Off Time-Nom (toff)	430 ns
Gate Charge	200nC
Current - Collector Pulsed (Icm)	104A
Td (on/off) @ 25°C	38ns/160ns
Switching Energy	490μJ (on), 680μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Fall Time-Max (tf)	120ns
Height	20.3mm
Length	15.875mm
Width	5.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free