FQPF50N06 Description
The planar stripe, DMOS technology developed by Fairchild is used to create these N-Channel enhancement mode power field effect transistors. In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver greater switching performance, and withstand high energy pulses. These gadgets are ideal for low voltage uses including automotive, DC/DC converters, and high efficiency switching for power management in mobile and battery-powered products.
FQPF50N06 Features
?31A, 60V, @VGS = 10 V, RDS(on) = 0.022
? Minimal gate fee ( typical 31 nC)
Low Crash ( typical 65 pF)
? Quick switch
? Complete avalanche testing
? Better dv/dt capabilities
? Maximum junction temperature rating of 175 °C.
FQPF50N06 Applications
Switching applications
