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FQA24N50

FQA24N50

FQA24N50

ON Semiconductor

FQA24N50 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FQA24N50 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 6 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.401g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2000
Series QFET®
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 200mOhm
Terminal Finish Tin (Sn)
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating24A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 290W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation290W
Turn On Delay Time80 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 200m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 24A Tc
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Rise Time250ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 155 ns
Turn-Off Delay Time 200 ns
Continuous Drain Current (ID) 24A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 96A
Dual Supply Voltage 500V
Nominal Vgs 5 V
Height 18.9mm
Length 15.8mm
Width 5mm
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:4680 items

FQA24N50 Product Details

FQA24N50 Description


FQA24N50 is a 500v N-Channel QFET? Power MOSFET. The N-Channel enhancement mode power field effect transistor FQA24N50 is produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology FQA24N50 has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQA24N50 is well suited for high-efficiency switch mode power supply, power factor correction, and electronic lamp ballast based on a half-bridge.



FQA24N50 Features


  • 24 A, 500 V, RDS(on) = 200 mΩ (Max.) @ VGS = 10 V, ID = 12 A

  • Low Gate Charge (Typ. 90 nC)

  • Low Crss (Typ. 55 pF)

  • 100% Avalanche Tested

  • RoHS compliant



FQA24N50 Applications


  • High-efficiency switch mode power supply

  • Power factor correction

  • Electronic lamp ballast based on half-bridge


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