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IRF7809AV

IRF7809AV

IRF7809AV

Infineon Technologies

IRF7809AV datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRF7809AV Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Surface MountYES
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2005
Series HEXFET®
JESD-609 Code e0
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code8541.29.00.95
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 245
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G8
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta
Operating ModeENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9m Ω @ 15A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3780pF @ 16V
Current - Continuous Drain (Id) @ 25°C 13.3A Ta
Gate Charge (Qg) (Max) @ Vgs 62nC @ 5V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V
Vgs (Max) ±12V
JEDEC-95 Code MS-012AA
Drain Current-Max (Abs) (ID) 13.3A
Drain-source On Resistance-Max 0.009Ohm
Pulsed Drain Current-Max (IDM) 100A
DS Breakdown Voltage-Min 30V
RoHS StatusNon-RoHS Compliant
In-Stock:4262 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.322590$0.32259
10$0.304330$3.0433
100$0.287104$28.7104
500$0.270852$135.426
1000$0.255521$255.521

IRF7809AV Product Details

IRF7809AV Description


In order to achieve an unheard-of balance between on-resistance and gate charge, this innovative gadget makes use of cutting-edge HEXFET Power MOSFET technology. It is perfect for high-efficiency DC-DC converters that power the newest generation of microprocessors because to the decreased conduction and switching losses. All crucial synchronous buck converter parameters, including as RDS(on), gate charge, and Cdv/dt-induced turn-on immunity, have been optimized for the IRF7809AV. For synchronous FET applications, the IRF7809AV offers particularly low RDS(on) and strong Cdv/dt immunity.



IRF7809AV Features


  • N-Channel Application-Specific MOSFETs

  • Ideal for CPU Core DC-DC Converters

  • Low Conduction Losses

  • Low Switching Losses

  • Minimizes Parallel MOSFETs for high current applications

  • 100% Tested for RG



IRF7809AV Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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