Name: FQPF3N60
Brand: ON Semiconductor
SKU: FQPF3N60
Price: 0.46000 USD
Availability: InStock

new-10%

FQPF3N60

Manufacturer part number:FQPF3N60

Manufacturer:ON Semiconductor

Description:FQPF3N60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FQPF3N60 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	QFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Voltage - Rated DC	600V
Technology	MOSFET (Metal Oxide)
Current Rating	2A
Number of Elements	1
Power Dissipation-Max	34W Tc
Element Configuration	Single
Power Dissipation	34W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3.6 Ω @ 1A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	450pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2A Tc
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Rise Time	30ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	2A
Threshold Voltage	5V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	600V
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free

FQPF3N60 Product Details

FQPF3N60 Description

FQPF3N60 N-Channel power MOSFET is to be used in a variety of applications. FQPF3N60 MOSFET is ideal for reducing resistance to on-state and offering better switching performance as well as being able to provide high avalanche energy. ON Semiconductor FQPF3N60 is widely used in switched-mode power supplies, active power factor correction, and electronic lamp ballasts.