Name: STW34NM60ND
Brand: STMicroelectronics
SKU: STW34NM60ND
Price: 12.83000 USD
Availability: InStock

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STW34NM60ND

Manufacturer part number:STW34NM60ND

Manufacturer:STMicroelectronics

Description:MOSFET (Metal Oxide) N-Channel Tube 110m Ω @ 14.5A, 10V ±25V 2785pF @ 50V 80.4nC @ 10V TO-247-3

Case Package:SOT-23

Datasheet:STW34NM60ND Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Series	FDmesh™ II
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	110MOhm
Additional Feature	ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Base Part Number	STW34N
Pin Count	3
Number of Elements	1
Power Dissipation-Max	190W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	190W
Case Connection	DRAIN
Turn On Delay Time	30 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	110m Ω @ 14.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2785pF @ 50V
Current - Continuous Drain (Id) @ 25°C	29A Tc
Gate Charge (Qg) (Max) @ Vgs	80.4nC @ 10V
Rise Time	53.4ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±25V
Fall Time (Typ)	61.8 ns
Turn-Off Delay Time	111 ns
Continuous Drain Current (ID)	29A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	25V
Drain to Source Breakdown Voltage	600V
Height	20.15mm
Length	15.75mm
Width	5.15mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STW34NM60ND Product Details

STW34NM60ND Description

STW34NM60ND MOSFET is part of the 2nd generation of MDmesh technology. STW34NM60ND N-channel MOSFET associates a new vertical design to the layout of the company's strip. STMicroelectronics STW34NM60ND brings together all the benefits of lower resistance to electrical current and quick switching to an inherent body diode that is fast to recover.