Name: FCPF650N80Z
Brand: ON Semiconductor
SKU: FCPF650N80Z
Price: 3.18000 USD
Availability: InStock

new-10%

FCPF650N80Z

Manufacturer part number:FCPF650N80Z

Manufacturer:ON Semiconductor

Description:FCPF650N80Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FCPF650N80Z Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Weight	2.27g
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2017
Series	SuperFET® II
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Number of Channels	1
Power Dissipation-Max	30.5W Tc
Element Configuration	Single
Turn On Delay Time	17 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	650m Ω @ 4A, 10V
Vgs(th) (Max) @ Id	4.5V @ 800μA
Input Capacitance (Ciss) (Max) @ Vds	1565pF @ 100V
Current - Continuous Drain (Id) @ 25°C	8A Tc
Gate Charge (Qg) (Max) @ Vgs	35nC @ 10V
Rise Time	11ns
Drain to Source Voltage (Vdss)	800V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	3.4 ns
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	8A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	8A
Height	16.07mm
Length	10.36mm
Width	4.9mm
RoHS Status	ROHS3 Compliant

FCPF650N80Z Product Details

FCPF650N80Z Description

FCPF650N80Z is a type of N-channel SUPERFET II MOSFET that belongs to the brand?new high voltage super?junction (SJ) MOSFET family provided by ON Semiconductor. Based on the charge balance technology, it is able to provide outstanding low on?resistance and lower gate charge performance, minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rates.