FQP30N06 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
FQP30N06 Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
9 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2013
Series
QFET®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
40MOhm
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Current Rating
30A
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
79W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
79W
Turn On Delay Time
10 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
40m Ω @ 15A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
945pF @ 25V
Current - Continuous Drain (Id) @ 25°C
30A Tc
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
Rise Time
85ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
40 ns
Turn-Off Delay Time
35 ns
Continuous Drain Current (ID)
30A
Threshold Voltage
4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
60V
Avalanche Energy Rating (Eas)
280 mJ
Max Junction Temperature (Tj)
175°C
Height
20.4mm
Length
10.1mm
Width
4.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:5044 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.42000
$1.42
10
$1.26700
$12.67
100
$1.00820
$100.82
500
$0.78916
$394.58
FQP30N06 Product Details
FQP30N06 Description
The FQP30N06 N-Channel enhancement mode power MOSFET is produced using proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. The FQP30N06 device is suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. FQP30N06 Features
● Switched mode power supplies ● Audio amplifier ● DC motor control ● Variable switching power applications ● New Energy Vehicle ● Photovoltaic Generation ● Wind Power Generation ● Smart Grid
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