IRFB4110PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRFB4110PBF Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2008
Series
HEXFET®
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Subcategory
FET General Purpose Power
Voltage - Rated DC
100V
Technology
MOSFET (Metal Oxide)
Current Rating
180A
Number of Elements
1
Power Dissipation-Max
370W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
370W
Case Connection
DRAIN
Turn On Delay Time
25 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
4.5m Ω @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
9620pF @ 50V
Current - Continuous Drain (Id) @ 25°C
120A Tc
Gate Charge (Qg) (Max) @ Vgs
210nC @ 10V
Rise Time
67ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
88 ns
Turn-Off Delay Time
78 ns
Continuous Drain Current (ID)
180A
Threshold Voltage
4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.0045Ohm
Drain to Source Breakdown Voltage
100V
Pulsed Drain Current-Max (IDM)
670A
Dual Supply Voltage
100V
Recovery Time
75 ns
Nominal Vgs
4 V
Height
16.51mm
Length
10.66mm
Width
4.826mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:1221 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$4.32000
$4.32
50
$3.52440
$176.22
100
$3.23350
$323.35
500
$2.66616
$1333.08
IRFB4110PBF Product Details
IRFB4110PBF Description
The IRFB4110PBF is a 100V single N-channel HEXFET? Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Infineon IRFB4110PBF is suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
IRFB4110PBF Features
Product qualification according to JEDEC standard Silicon optimized for applications switching below Softer body-diode compared to previous silicon generation Wide portfolio available Industry standard through-hole power package High-current rating
IRFB4110PBF Applications
SMPS DC motor drives Battery powered applications UPS Solar power inverter
Related Products
Similar Transistors - FETs, MOSFETs - Single from Infineon Technologies and other manufacturers
