STP20N90K5 Description
This very high voltage N-channel Power MOSFET is designed using MDmesh? K5technology based on an innovative proprietary vertical structure. The result is adramatic reduction in on-resistance and ultra-low gate charge for applicationsrequiring superior power density and high efficiency.
STP20N90K5 Features
? Industry’s lowest RDS(on) x area
? Industry’s best FoM (figure of merit)
? Ultra-low gate charge
? 100% avalanche tested
? Zener-protected
STP20N90K5 Applications
? Switching applications
