FQP12N60 Description
The FQP12N60 N-Channel enhancement mode power field effect transistor is produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
FQP12N60 Features
12 A, 600 V, RDS(on) = 650 mΩ (Max.) @ VGS = 10 V, ID = 6 A
Low Gate Charge (Typ. 48 nC)
Low Crss (Typ. 21 pF)
100% Avalanche Tested
FQP12N60 Application
High-efficient switched-mode power supplies
Active power factor correction
Electronic lamp ballast based on half-bridge topology
