FQP10N60C Description
These N-Channe enhanced mode Bauer field effect transistors are made of Fairchild's planar stripesDMOS technology. This advanced technology is tailored to micron open-state resistors, provides excellent switching performance, and withstands high-energy pulses in avalanche and rectifier modes. these devices are very suitable for active power factor correction of efficient switching mode power supplies. Electronic lamp ballast based on half-bridge topology.
FQP10N60C Features
9.5 A,600 V,Rps(on)=730mΩ(Max.) @VGs=10 V lp=4.75A
Low Gate Charge(Typ.44nC)
Low Crss(Typ.18 pF)
100% Avalanche Tested
FQP10N60C Applications
efficient switching mode power supplies
