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STB80PF55T4

STB80PF55T4

STB80PF55T4

STMicroelectronics

STB80PF55T4 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

SOT-23

STB80PF55T4 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Series STripFET™ II
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Termination SMD/SMT
ECCN Code EAR99
Resistance 18mOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -60V
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 245
Current Rating-300mA
[email protected] Reflow Temperature-Max (s) 30
Base Part Number STB80P
Pin Count4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 300W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation300W
Case Connection DRAIN
Turn On Delay Time35 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 80A Tc
Gate Charge (Qg) (Max) @ Vgs 258nC @ 10V
Rise Time190ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±16V
Fall Time (Typ) 80 ns
Turn-Off Delay Time 165 ns
Continuous Drain Current (ID) 40A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 16V
Drain Current-Max (Abs) (ID) 80A
Drain to Source Breakdown Voltage -55V
Dual Supply Voltage 55V
Nominal Vgs 3 V
Height 4.6mm
Length 10.4mm
Width 9.35mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2611 items

Pricing & Ordering

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STB80PF55T4 Product Details

STB80PF55T4 Description


STB80PF55T4 is a 55v P-channel STripFETTM II Power MOSFET. The Power MOSFET STB80PF55T4 is the latest development of STMicroelectronic's unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics, and less critical alignment steps allowing remarkable manufacturing reproducibility.



STB80PF55T4 Features


  • Extremely dv/dt capability

  • 100% avalanche tested

  • Application-oriented characterization

  • Drain-source voltage (VGS = 0):55V

  • Drain current (continuous) at TC = 25°C:80A



STB80PF55T4 Applications


  • Rotary Switch

  • DIP Switch

  • Limit Switch

  • Reed Switch

  • Rocker Switch

  • Toggle Switch


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