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IXFN60N60

IXFN60N60

IXFN60N60

IXYS

MOSFET N-CH 600V 60A SOT-227B

SOT-23

IXFN60N60 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 8 Weeks
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 3
Weight 40g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2000
Series HiPerFET™
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 4
Termination Screw
ECCN Code EAR99
Resistance 75MOhm
Terminal Finish Nickel (Ni)
Additional FeatureAVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal FormUNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating60A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count4
JESD-30 Code R-PUFM-X4
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 700W Tc
Operating ModeENHANCEMENT MODE
Power Dissipation600W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 75m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 15000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 60A Tc
Gate Charge (Qg) (Max) @ Vgs 380nC @ 10V
Rise Time52ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 26 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) 60A
Threshold Voltage 4.5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 240A
Dual Supply Voltage 600V
Avalanche Energy Rating (Eas) 4000 mJ
Isolation Voltage2.5kV
Nominal Vgs 4.5 V
REACH SVHC No SVHC
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:2237 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$47.30000$47.3
10$44.23600$442.36
30$40.91200$1227.36
100$38.35500$3835.5
250$35.79800$8949.5

About IXFN60N60

The IXFN60N60 from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 600V 60A SOT-227B.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXFN60N60, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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