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FQI5N20LTU

FQI5N20LTU

FQI5N20LTU

ON Semiconductor

Trans MOSFET N-CH 200V 4.5A 3-Pin(3+Tab) I2PAK Rail

SOT-23

FQI5N20LTU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package I2PAK (TO-262)
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2000
Series QFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3.13W Ta 52W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2.25A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 325pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.5A Tc
Gate Charge (Qg) (Max) @ Vgs 6.2nC @ 5V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±25V
In-Stock:3777 items

About FQI5N20LTU

The FQI5N20LTU from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans MOSFET N-CH 200V 4.5A 3-Pin(3+Tab) I2PAK Rail.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the FQI5N20LTU, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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