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IRFB17N20D

  • IRFB17N20D - IRFB17N20D datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
  • IRFB17N20D - IRFB17N20D datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

IRFB17N20D

IRFB17N20D

Infineon Technologies

IRFB17N20D datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRFB17N20D Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220AB
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2000
Series HEXFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3.8W Ta 140W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 170mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS StatusNon-RoHS Compliant
In-Stock:3077 items

IRFB17N20D Product Details

IRFB17N20D Benefits

Low Gate-to-Drain Charge to Reduce

Switching Losses

Fully Characterized Capacitance Including

Effective COSS to Simplify Design, (See

App. Note AN1001)

Fully Characterized Avalanche Voltage

and Current

Lead-Free


IRFB17N20D Applications

High-frequency DC-DC converters

Lead-Free


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