STD10NM65N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website
SOT-23
STD10NM65N Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Series
MDmesh™ II
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
480mOhm
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
STD10
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Power Dissipation-Max
90W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
90W
Turn On Delay Time
12 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
480m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
850pF @ 50V
Current - Continuous Drain (Id) @ 25°C
9A Tc
Gate Charge (Qg) (Max) @ Vgs
25nC @ 10V
Rise Time
8ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
20 ns
Turn-Off Delay Time
50 ns
Continuous Drain Current (ID)
9A
Threshold Voltage
3V
JEDEC-95 Code
TO-252AA
Gate to Source Voltage (Vgs)
25V
Drain Current-Max (Abs) (ID)
9A
Drain to Source Breakdown Voltage
650V
Height
2.4mm
Length
6.6mm
Width
6.2mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:1270 items
STD10NM65N Product Details
STD10NM65N Description
STD10NM65N belongs to the family of N-channel power MOSFETs that are manufactured by STMicroelectronics based on the generation 2 MDmesh? II technology. STD10NM65N features a verticle structure to provide the lowest on-resistance and gate charge among electronic components. Due to its specific characteristics, it is well suited for the most demanding high-frequency converters.
STD10NM65N Features
Low on-resistance
Low gate charge
Verticle structure
Generation 2 MDmesh? II technology
Available in the DPAK package
STD10NM65N Applications
Switching applications
High-efficiency converters
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