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FQI27P06TU

FQI27P06TU

FQI27P06TU

ON Semiconductor

MOSFET P-CH 60V 27A I2PAK

SOT-23

FQI27P06TU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package I2PAK
Operating Temperature-55°C~175°C TJ
PackagingTube
Series QFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3.75W Ta 120W Tc
FET Type P-Channel
Rds On (Max) @ Id, Vgs 70mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 27A Tc
Gate Charge (Qg) (Max) @ Vgs 43nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
In-Stock:2783 items

About FQI27P06TU

The FQI27P06TU from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET P-CH 60V 27A I2PAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the FQI27P06TU, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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