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FDB42AN15A0

FDB42AN15A0

FDB42AN15A0

ON Semiconductor

FDB42AN15A0 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

FDB42AN15A0 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2002
Series PowerTrench®
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 150V
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating35A
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 150W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation150W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 42m Ω @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2150pF @ 25V
Current - Continuous Drain (Id) @ 25°C 5A Ta 35A Tc
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Rise Time19ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 23 ns
Turn-Off Delay Time 27 ns
Continuous Drain Current (ID) 35A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.042Ohm
Drain to Source Breakdown Voltage 150V
Avalanche Energy Rating (Eas) 78 mJ
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:1858 items

FDB42AN15A0 Product Details

FDB42AN15A0 Description


FDB42AN15A0 is a 150v N-Channel PowerTrench? MOSFET. The onsemi MOSFET FDB42AN15A0 is designed for Consumer Appliances, Synchronous Rectification, Uninterruptible Power Supply, and Micro Solar inverters. The Operating and Storage Temperature Range is between -55 and 175℃. And the MOSFET FDB42AN15A0 is in the TO-263-3 package with 150W power dissipation.



FDB42AN15A0 Features


  • Typ RDS(on) = 36mΩ @ VGS = 10V, ID = 12A

  • Typ Qg(tot) = 33nC @VGS = 10V

  • Low Miller Charge

  • Low Qr Body Diode

  • UIS Capability (Single Pulse and Repetitive Pulse)



FDB42AN15A0 Applications


  • Consumer Appliances

  • Synchronous Rectification

  • Uninterruptible Power Supply

  • Micro Solar Inverter


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