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IPD50N06S4L08ATMA1

IPD50N06S4L08ATMA1

IPD50N06S4L08ATMA1

Infineon Technologies

MOSFET N-CH 60V 50A TO252-3

SOT-23

IPD50N06S4L08ATMA1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package PG-TO252-3
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2006
Series OptiMOS™
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 71W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.2V @ 35μA
Input Capacitance (Ciss) (Max) @ Vds 4780pF @ 25V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
RoHS StatusROHS3 Compliant
In-Stock:3946 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$105.344924$105.344924
10$99.382003$993.82003
100$93.756607$9375.6607
500$88.449629$44224.8145
1000$83.443047$83443.047

About IPD50N06S4L08ATMA1

The IPD50N06S4L08ATMA1 from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 60V 50A TO252-3.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IPD50N06S4L08ATMA1, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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