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FQI19N20TU

FQI19N20TU

FQI19N20TU

ON Semiconductor

MOSFET N-CH 200V 19.4A I2PAK

SOT-23

FQI19N20TU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package I2PAK (TO-262)
Operating Temperature-55°C~150°C TJ
PackagingTube
Series QFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3.13W Ta 140W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 150mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 19.4A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
In-Stock:12983 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$3.598954$3.598954
10$3.395240$33.9524
100$3.203057$320.3057
500$3.021752$1510.876
1000$2.850709$2850.709

About FQI19N20TU

The FQI19N20TU from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 200V 19.4A I2PAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the FQI19N20TU, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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