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FQB13N06LTM

FQB13N06LTM

FQB13N06LTM

ON Semiconductor

MOSFET N-CH 60V 13.6A D2PAK

SOT-23

FQB13N06LTM Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK (TO-263AB)
Operating Temperature-55°C~175°C TJ
PackagingTape & Reel (TR)
Published 2001
Series QFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 3.75W Ta 45W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 110mOhm @ 6.8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
Current - Continuous Drain (Id) @ 25°C 13.6A Tc
Gate Charge (Qg) (Max) @ Vgs 6.4nC @ 5V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
In-Stock:1394 items

About FQB13N06LTM

The FQB13N06LTM from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 60V 13.6A D2PAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the FQB13N06LTM, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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