Name: IRFU3710ZPBF
Brand: Infineon Technologies
SKU: IRFU3710ZPBF
Availability: InStock

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IRFU3710ZPBF

Manufacturer part number:IRFU3710ZPBF

Manufacturer:Infineon Technologies

Description:IRFU3710ZPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRFU3710ZPBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2004
Series	HEXFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Termination	Through Hole
ECCN Code	EAR99
Resistance	18MOhm
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	260
Current Rating	42A
[email protected] Reflow Temperature-Max (s)	30
Lead Pitch	2.28mm
Lead Length	9.65mm
Number of Elements	1
Power Dissipation-Max	140W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	140W
Case Connection	DRAIN
Turn On Delay Time	14 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	18m Ω @ 33A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2930pF @ 25V
Current - Continuous Drain (Id) @ 25°C	42A Tc
Gate Charge (Qg) (Max) @ Vgs	100nC @ 10V
Rise Time	43ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	42 ns
Turn-Off Delay Time	53 ns
Continuous Drain Current (ID)	42A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	56A
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	220A
Dual Supply Voltage	100V
Avalanche Energy Rating (Eas)	150 mJ
Recovery Time	53 ns
Nominal Vgs	4 V
Height	6.1mm
Length	6.6mm
Width	2.3mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free

IRFU3710ZPBF Product Details

IRFU3710ZPBF Description

IRFU3710ZPBF is a 100v HEXFET? Power MOSFET. This HEXFET? Power MOSFET IRFU3710ZPBF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed, and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.