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IRF3707ZSPBF

IRF3707ZSPBF

IRF3707ZSPBF

Infineon Technologies

MOSFET N-CH 30V 59A D2PAK

SOT-23

IRF3707ZSPBF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingTube
Published 2003
Series HEXFET®
JESD-609 Code e3
Part StatusDiscontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 12.5MOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Subcategory FET General Purpose Power
Voltage - Rated DC 30V
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating59A
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 57W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation57W
Case Connection DRAIN
Turn On Delay Time9.8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.5m Ω @ 21A, 10V
Vgs(th) (Max) @ Id 2.25V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds 1210pF @ 15V
Current - Continuous Drain (Id) @ 25°C 59A Tc
Gate Charge (Qg) (Max) @ Vgs 15nC @ 4.5V
Rise Time41ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.6 ns
Turn-Off Delay Time 12 ns
Continuous Drain Current (ID) 59A
Threshold Voltage 1.8V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 42A
Drain to Source Breakdown Voltage 30V
Dual Supply Voltage 30V
Avalanche Energy Rating (Eas) 40 mJ
Recovery Time 59 ns
Nominal Vgs 1.8 V
Height 4.83mm
Length 10.67mm
Width 9.652mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1610 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.191074$0.191074
10$0.180259$1.80259
100$0.170055$17.0055
500$0.160430$80.215
1000$0.151349$151.349

About IRF3707ZSPBF

The IRF3707ZSPBF from Infineon Technologies is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 30V 59A D2PAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IRF3707ZSPBF, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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