FQA18N50V2 Description
Using Fairchild's unique, planar stripe, DMOS technology, N-Channel enhancement mode power field effect transistors with the model number FQA18N50V2 are created. In the avalanche and commutation modes, this cutting-edge technology has been specifically designed to reduce on-state resistance, deliver greater switching performance, and withstand high energy pulses. FQA18N50V2 are excellent for active power factor correction, electronic light ballasts based on half bridge architecture, and high efficiency switching mode power supply.
FQA18N50V2 Features
Fast switching
100% avalanche tested
Low Crss ( typical 11 pF)
Improved dv/dt capability
Low gate charge ( typical 42 nC)
20A, 500V, RDS(on) = 0.265? @VGS = 10 V
FQA18N50V2 Applications
Industrial
Personal electronics
Communications equipment
